Document Details
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Document Type |
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Thesis |
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Document Title |
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Fabrication of Nanoscale MOS Capacitors Using Solution-Processed P-Type Cu2O Thin Films تكوين مكثفات MOS نانوية من أغشية أكسيد النحاس الموجبة القطبية المصنعة بطريقة المحلول السائل |
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Subject |
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Faculty of Sciences |
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Document Language |
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Arabic |
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Abstract |
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Copper oxide in Cu2O phase is a potentially promising material for many applications due to its unique intrinsic p-type polarity, transparency, non-toxic, abundance, and low manufacture cost. Moreover, the fact that such oxide could be prepared at low temperature with solution process makes it a perfect candidate for development of flexible, printable and transparent electronic devices. In this work, we prepared CuxO thin films using three different solution precursors at low annealing temperature of 200oC. We, then, used those films to fabricate Metal Oxide Semiconductor (MOS) capacitors which are essential for designing transparent p-type thin-film transistors. The first Cu2O solution was prepared by mixing Cu(II) acetate with 2-Methoxyethanol and Ethanolamine that serve as solvent and stabilizer, respectively. Glycerol was, then, added to the mixture with different volume ratios as a helping agent to reduce the annealing temperature. Applying the green chemistry, we, secondly, prepared CuO solution by dissolved Cu(II) nitrate in deionized water and glycerol. Finally, we tried a novel and simple green synthesis of Cu2O thin films by mixing the copper powder with spinach leaves extract for the first time. To complete the building of the MOS capacitors we need to prepare a good high-dielectric material. Y2O3 as a high-dielectric was selected due to its good electrical properties, on one hand, and the ability of producing it by green chemistry, on the other. All films, the semiconductor films CuxO and dielectric films Y2O3, were then spun on P+ Si substrates to form various MOS structures. We build six MOS capacitors three of them with Y2O3 and the others with SiO2. All fabricated MOS capacitors exhibited P-type polarity. The total MOS capacitance at flat band (CMOS,FB) showed a high value of 59.57nF/cm2 when we used the Cu(II) acetate solution with SiO2 as dielectric. In general MOS capacitors with SiO2 dielectric gave higher values of the acceptor doping concentrations (Na) than those with Y2O3. The lowest value of leakage current about 6.24×10-4A/cm2 at V = -1V was observed in MOS capacitor with Y2O3 and Cu(II) acetate, while the smallest hysteresis voltage around 20mV was noticed in MOS capacitor with spinach leaves extract and SiO2. |
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Supervisor |
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Dr. Hala Al-Jawhari |
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Thesis Type |
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Master Thesis |
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Publishing Year |
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1438 AH
2017 AD |
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Co-Supervisor |
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Dr. Norah Al Senany |
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Added Date |
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Monday, August 7, 2017 |
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Researchers
| صفية عبدالرحمن الشهري | Al-Shehri, Safeyah Abdulrahman | Researcher | Master | |
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