Document Details Document Type : Article In Journal  Document Title : Thermal Study of Gallium Nitride - Metal Contact دراسة حرارية لشريحة من مادة نتريد الجاليوم الملتصقة بمعدن   Subject : Physics  Document Language : English  Abstract : GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 1019cm–3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10–7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero- bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it, increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 ? at room temperature.  ISSN : 1319-1012  Journal Name : Journal of King Abdulaziz University - science  Volume : 21  Issue Number : 2  Publishing Year : 2009 AH 2009 AD  Article Type : Article  Added Date : Monday, February 1, 2010  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email سعيد سعد الامير Al-Ameer, Saeed S Researcher Doctorate ssaameer@yahoo.com Files File Name Type Description  24993.pdf pdf Abstract Back To Researches Page