Document Details

Document Type : Article In Journal 
Document Title :
Study of some Structural and Transport Properties of Evaporated Indium Arsenide (InAs)Thin Films
دراسة بعض الخواص التركيبية والكهربائية الانتقالية للأغشية الرقيقة من زرنيخ الإنديوم
 
Subject : Study of some Structural and Transport Properties of Evaporated Indium Arsenide (InAs)Thin Films 
Document Language : Arabic 
Abstract : The object of this article was to study the crystal structure of Indium Arsenide (InAs) in both powder and thin films form , using x-ray diffractometry.The x-ray diffraction patterns of powder InAs showed polycrystalline structure of cubic phase with lattice constant of: a = 6.0524 ?The x-ray diffraction patterns of InAs thin films showed the crystal structure of cubic system and preferential orientation (111) plane and the annealing effect is increase of the degree of crystallininty. The transport of electrical properties such as electrical resistivity ? was studied for films of different thickness as deposited. It was found that for InAs films the electrical conductivity is strongly affected by the sample temperature , the heat treatment and film thickness. InAs films showed semiconducting behavior. The dependence of electrical resistivity on film thicknesses showed that the electrical resistivity increases as the film thicknesses increases. The activation energy ?E1 , ?E2 of the free charge carriers for InAs samples was calculated using the electrical resistivity data at different temperatures for different thicknesses was found that the activation energy decreases as the film thicknesses increases. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 23 
Issue Number : 2 
Publishing Year : 1432 AH
2011 AD 
Article Type : Article 
Added Date : Thursday, October 3, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
فاطمة باهبريBahabri, Fatmah ResearcherDoctorate 
رقية العرينيAloraini, Rogaiah ResearcherDoctorate 
سارة البلويAlblowi, Sara ResearcherDoctorate 

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