Document Details

Document Type : Article In Journal 
Document Title :
Behavior of the Switching Effect in P-Type TlInS2 Ternary Chalcogenide Semiconductor
سلوك ظاهرة القطع والتوصيل في شبه الموصل الثلاثي الشالكوجينيدي ثاليوم-إنديوم-ثنائي الكبريت TlInS2
 
Subject : Behavior of the Switching Effect in P-Type TlInS2 Ternary Chalcogenide Semiconductor 
Document Language : English 
Abstract : Investigation of the switching phenomenon in single crystal TlInS2 revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical Ag/p-TlInS2/Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative differential resistance (NDR). TlInS2 is a ternary semiconductor exhibiting S-type i-v characteristics. The results strongly indicate that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 20 
Issue Number : 2 
Publishing Year : 1429 AH
2008 AD 
Article Type : Article 
Added Date : Sunday, September 29, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
نجاة توفيق عباسAbbas, Najat TawfeegResearcher  
فاطمة سالم باهبريBahabri, Fatmah SalemResearcher  
مصطفى محمد مباركMubarak, Mostafa MohammadResearcher  
حمدي توفيق شعبانShaaban, Hamdi TawfeegResearcher  
أحمد عبد الله الغامديAlgamdi, Ahmed AbdullahResearcher  
سهام الحربيAlharbi, Seham Researcher  

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