Document Details

Document Type : Article In Journal 
Document Title :
Negative-differential-resistance effects in TlInTe2 ternary semiconductor
Negative-differential-resistance effects in TlInTe2 ternary semiconductor
 
Subject : Physics 
Document Language : English 
Abstract : Thallium indium ditelluride single crystals, were prepared by a special high efficiency, low cost, design, constructed locally, based on Bridgman technique. A special prespex sample holder and quartz cryostat were used to investigate the switching phenomena in TlInTe2 single crystal. Current-controlled negative resistance (CCNR) has been observed for the first time. The switching effect observed in such crystal shows memory. The current-voltage (i - v) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative-differential-resistance (NDR) region at higher current densities. This behavior has been explained by an electrothermal model. The results strongly indicate that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness as well. Switching parameters (ith, vth, ih, vh, Pth and ROFF/RON) are found to depend on the surrounding conditions as well as the sample thickness. © 2009 Elsevier B.V. All rights reserved. 
ISSN : 0925-8388 
Journal Name : Journal of Alloys and Compounds 
Volume : 484 
Issue Number : 1-2 
Publishing Year : 2009 AH
2009 AD 
Article Type : Article 
Added Date : Monday, October 12, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
أحمد عبدالله الغامديAL-GHAMDI, A AResearcherDoctorateAGAMDI@kau.edu.sa
فرج سعيد الحازميAL-HAZMI, F SResearcherDoctorateFalhazmi@kau.edu.sa

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